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STMicroelectronics Electronic Components Datasheet

B9NB50 Datasheet

N-Channel Enhancement Mode MOSFET

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STB9NB50
N - CHANNEL ENHANCEMENT MODE
Power MESHMOSFET
TYPE
ST B9NB50
VDSS
500 V
RDS(on)
< 0.85
ID
8.6 A
s TYPICAL RDS(on) = 0.75
s EXTREMELY HIGH dv/dt CAPABILITY
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s VERY LOW INTRINSIC CAPACITANCE
s GATE CHARGE MINIMIZED
s LOW LEAKAGE CURRENT
s APPLICATION ORIENTED
CHARACTERIZATION
s FOR SMD D2PAK VERSION CONTACT
SALES OFFICE
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLY (SMPS)
s DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY (UPS)
123
I2PAK
TO-262
(suffix ”-1”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VD GR
VGS
ID
ID
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM()
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg St orage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
March 1998
Value
500
500
± 30
8.6
5.4
34.4
125
1.0
4.5
-65 to 150
150
(1) ISD 9A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
Uni t
V
V
V
A
A
A
W
W/oC
V/ ns
oC
oC
1/8


STMicroelectronics Electronic Components Datasheet

B9NB50 Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

STB9NB50
THERMAL DATA
Rt hj-ca se
Rt hj- amb
Rt hj- amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
1
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
S ymb ol
IAR
E AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR , VDD = 50 V)
Max Valu e
8.6
520
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
S ymb ol
V(BR)DSS
IDSS
IGSS
P a ra m et er
Test Conditions
Dr ain- sou rc e
Breakdown Voltage
ID = 250 µA
VGS = 0
Zero G ate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
oC
Tc = 125
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
500
Typ .
Max.
Unit
V
1 µA
50 µA
±100 nA
ON ()
S ymb ol
V GS(th )
RDS( o n )
ID(o n)
P a ra m et er
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10 V ID = 4.3 A
Resistance
On St ate Drain Current VDS > ID(on) x RDS(on) max
VGS = 10 V
Min.
3
Typ .
4
Max.
5
Unit
V
0.75 0.85
8.6
A
DYNAMIC
S ymb ol
gfs ()
Ciss
Coss
Crss
P a ra m et er
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 4.3 A
Min.
4.5
Typ .
5.7
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
1250
175
20
1625
236
27
pF
pF
pF
2/8


Part Number B9NB50
Description N-Channel Enhancement Mode MOSFET
Maker STMicroelectronics
Total Page 8 Pages
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