7$% Type VDS RDS(on) max. ID STB130NS04ZB-1 Clamped 9 mΩ 80 A ,3$.  Figure 1. Internal schematic diagram
* Designed for automotive applications and AEC-.

and AEC-Q101 qualified
* 100% avalanche tested
* Low capacitance and gate charge
* 175°C maximum junction te.

This fully clamped MOSFET is produced using ST’s latest advanced Mesh overlay process, which is based on an innovative strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particular.

B130NS04ZB

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