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AM81214-060 - RF & MICROWAVE TRANSISTORS

General Description

The AM81214-060 device is a high power transistor specifically designed for L-Band radar pulsed output and driver applications.

The device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding ∞:1 output VSWR at rated RF conditions.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AM81214-060 . . . . . . . . RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR ∞:1 LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 55 W MIN. WITH 6.6 dB GAIN .400 x .400 2NLFL (S042) hermetically sealed ORDER CODE AM81214-060 BRANDING 81214-60 DESCRIPTION The AM81214-060 device is a high power transistor specifically designed for L-Band radar pulsed output and driver applications. The device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding ∞:1 output VSWR at rated RF conditions.