Datasheet Details
| Part number | AM80814-025 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 56.46 KB |
| Description | RF & MICROWAVE TRANSISTORS |
| Datasheet | AM80814-025_STMicroelectronics.pdf |
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Overview: AM80814-025 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS . . . . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 25 W MIN. WITH 7.0 dB GAIN .400 x .
| Part number | AM80814-025 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 56.46 KB |
| Description | RF & MICROWAVE TRANSISTORS |
| Datasheet | AM80814-025_STMicroelectronics.pdf |
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AM80814-025 is a high power silicon Class C transistor designed for ultra-broadband L-Band radar applications.
This device is capable of operation over a broad range of pulse widths and duty cycles.
Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.
Compare AM80814-025 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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