9NM60N std9nm60n equivalent, std9nm60n.
Order codes
STD9NM60N STF9NM60N STP9NM60N
VDSS (@Tjmax)
RDS(on) max.
650 V < 0.745 Ω
ID 6.5 A
* 100% avalanche tested
* Low input capacitance and gate charg.
Description
This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Pow.
This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. I.
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