8DN6LF6 mosfet equivalent, n-channel power mosfet.
Order code
VDS
RDS(on) max.
ID
4 1
STS8DN6LF6AG
60 V
24 mΩ
8A
SO-8
D1(7, 8)
D2(5, 6)
* AEC-Q101 qualified
* Very low on-resistance
* Very low gate.
* Switching applications
PTOT 3.2 W
S1(1)
S2(3)
SC12820
Description
This device is a dual N-channel Power MOSFE.
This device is a dual N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Product status link STS8DN6LF6AG
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