7ANM60N Datasheet, STMicroelectronics

Order code STB7ANM60N STD7ANM60N VDS RDS(on) max. ID 600 V 0.9 Ω 5A
* AEC-Q101 qualified
* 100% avalanche tested
* Low input capacitance and gate charg.

* Switching applications AM01475v1_noZen Description These devices are N-channel Power MOSFETs developed using the.

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and.

7A176A

7A5U12-12

7A5U5

7A5U5HV