6N60M2 mosfet equivalent, n-channel mosfet.
Order code
VDS
STN6N60M2
600 V
* Extremely low gate charge
* Excellent output capacitance (Coss) profile
* 100% avalanche tested
* Zener-protected
R.
* Switching applications
G(1)
Description
This device is an N-channel Power MOSFET developed using MDmesh M2
te.
This device is an N-channel Power MOSFET developed using MDmesh M2
technology. Thanks to its strip layout and an improved vertical structure, the device
exhibits low on-resistance and optimized switching characteristics, rendering it
S(2)
NG1D3S.
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