3 2 1 TO-247 Order code VDSS (@Tjmax) RDS(on) max ID STW60NM50N 550 V <0.043 Ω 68 A
* 100% avalanche tested
* Low input capacitance and gate charge
* Lo.

* Switching applications Figure 1. Internal schematic diagram ' * Description This device is an N-channel Po.

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and g.

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