6045DV Datasheet | STMicroelectronics

® ESM6045DV NPN DARLINGTON POWER MODULE s s s s s s s HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE FULLY INSULATED PACKAGE (UL PLIANT) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: MOTOR CONTROL s SMPS & UPS s DC/DC & DC/AC CONVERTERS s WELDING EQUIPMENT s ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV V EBO IC I CM IB I BM P tot V isol T stg Tj Parameter Collector-Emitter Voltage (V BE = -5 V) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p = 10 ms) Base Current Base Peak Current (t p = 10 ms) Total Dissipation at T c = 25 o C Insulation Withstand Voltage (RMS) from All Four Terminals to Exernal Heatsink Storage Temperature Max. Operating Junction Temperature Value 600 450 7 84 126 8 16 250 2500 -55 to 150 150 Unit V V V A A A A W V o o V CEO(sus) Collector-Emitter Voltage (I B = 0) September 2003 1/8 Free Datasheet http://../ ESM6045DV THERMAL DATA R thj-case R thj-case R thc-h Thermal Resistance Junction-case (transistor) Thermal Resistance Junction-case (diode) Thermal Resistance Case-heatsink With Conductive Grease Applied Max Max Max 0.5 1.2 0.05 o o o C/W C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symbol I CER # I CEV # IEBO # Parameter Collector Cut-off Current (R BE = 5 Ω ) Collector Cut-off Current (V BE = -5) Emitter Cut-off Current (I C = 0) Test Conditions V CE = V CEV V CE = V CEV V CE = V CEV V CE = V CEV V EB = 5 V I C = 0.2 A L = 25 m H V clamp = 450 V I C = 70 A IC IC IC IC = = = = 50 50 70 70 A A A A V CE = 5 V IB IB IB IB = = = = 1 1 4 4 A A A A T j = 100 o C T j = 100 o C T j = 100 o C 375 450 T j = 100 o C T j = 100 o C Min. Typ. Max. 1.5 22 1 15 1 Unit m A m A m A m A m A V V CEO(SUS) - Collector-Emitter Sustaining Voltage (I B = 0) h FE ∗ V CE(sat) ∗ DC Current Gain Collector-Emitter Saturation Voltage 120 1.2 1.6 1.35 1.7 2.3 2.4...