Type STP5NK80Z STP5NK80ZFP
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* VDSS (@Tjmax) 800 V 800 V RDS(on) < 2.4 Ω < 2.4 Ω ID 4.3 A 4.3 A 3 1 2 100% avalanche tested Gate charge minimized .

Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Internal schem.

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the mo.

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