58N60DM2 Datasheet, STMicroelectronics

Order code STW58N60DM2AG VDS 600 V RDS(on) max. 0.060 Ω ID 50 A PTOT 360 W 3 2 1 TO-247 Figure 1: Internal schematic diagram D(2) G(1) S(3) AM15572v1_no_tab
*.

and AEC-Q101 qualified
* Fast-recovery body diode
* Extremely low gate charge and input capacitance
* Low on.

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters.

58N12A

58N17BH

58N3LH5

58N9BE

58-12-xxx-xxx

58-18-xxx-xxx

58-24-xxx-xxx

58-48-xxx-xxx

58-5-xxx-xxx

58-6-xxx-xxx

58-9-xxx-xxx

5804

5810-F