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40107BE - HCF40107BE

Description

HCF40107B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages.

Features

  • a wired-OR capability and high output sink current capability (136 mA typ. at VDD = 10V, VDS = 1V). DIP SOP ORDER CODES.

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Other Datasheets by STMicroelectronics

Part Number Description
40110BE HCF40110BE

Full PDF Text Transcription

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HCF40107B DUAL 2-INPUT NAND BUFFER/DRIVER s 32 TIMES STANDARD B-SERIES OUTPUT CURRENT DRIVE SINKING CAPABILITY 136 mA TYP. AT VDD = 10V, VDS = 1V s QUIESCENT CURRENT SPECIF. UP TO 20V s 5V, 10V AND 15V PARAMETRIC RATINGS s INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C s 100% TESTED FOR QUIESCENT CURRENT s MEETS ALL REQUIREMENTS OF JEDEC JESD13B "STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DESCRIPTION HCF40107B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages. HCF40107B is a dual 2-input NAND buffer/driver containing two independent 2-input NAND buffers with open-drain single n-channel transistor outputs.
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