Order code STL3NM60N RDS(on) max. 1.8 Ω ID 2.2 A
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input resistance Application .

Figure 1. Internal schematic diagram 4G 3 2 1S 5 6 D 7 8 Description This device is an N-channel Power MOSFET develo.

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and g.

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