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3N150 Datasheet

N-Channel MOSFET

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STFW3N150, STH3N150-2
STP3N150, STW3N150
Datasheet
N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH Power MOSFETs
in TO-3PF, H2PAK-2, TO-220 and TO247 packages
23
1
TO-3PF
TAB
3
2
TO-220 1
D(2, TAB)
TAB
2
3
1
H2PAK-2
3
2
1
TO-247
D(TAB)
G(1)
G(1)
Features
Order codes
VDS
RDS(on) max.
ID
PTOT
STFW3N150
63 W
STH3N150-2
1500 V
STP3N150
2.5 A
140 W
STW3N150
• 100% avalanche tested
• Intrinsic capacitances and Qg minimized
• High speed switching
• Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.)
Applications
• Switching applications
S(3)
(TO-3PF, TO-220 and TO-247)
S(2, 3)
(H2PAK-2)
AM15557v1
Description
These Power MOSFETs are designed using the STMicroelectronics consolidated
strip-layout-based MESH OVERLAY process. The result is a product that matches or
improves on the performance of comparable standard parts from other
manufacturers.
Product status link
STFW3N150
STH3N150-2
STP3N150
STW3N150
DS5052 - Rev 12 - May 2020
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

3N150 Datasheet

N-Channel MOSFET

No Preview Available !

STFW3N150, STH3N150-2, STP3N150, STW3N150
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Parameter
VDS
Drain-source voltage
VGS
Gate-source voltage
Drain current (continuous) at TC = 25 °C
ID
Drain current (continuous) at TC = 100 °C
IDM(2)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
VISO
Insulation withstand voltage (RMS) from all three leads to
external heat sink (t = 1 s; TC = 25 °C)
Derating factor
Tstg
Storage temperature range
TJ
Operating junction temperature range
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
Value
Unit
TO-3PF H2PAK-2 TO-220 TO-247
1500
V
±30
V
2.5(1)
2.5
A
1.6(1)
1.6
10
A
63
140
W
3.5
kV
0.5
1.12
W/°C
-55 to 150
°C
Table 2. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case
Rthj-amb Thermal resistance junction-ambient
Rthj-pcb(1) Thermal resistance junction-pcb
1. When mounted on 1 inch2 FR-4 board, 2 oz Cu.
Value
Unit
TO-3PF H2PAK-2 TO-220 TO-247
2
0.89
°C/W
50
62.5
50 °C/W
35
°C/W
Symbol
IAR
EAS
Table 3.
Parameter
Avalanche current, repetitive or not-repetitive
(pulse width limited by TJ max)
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
Max value
Unit
2.5
A
450
mJ
DS5052 - Rev 12
page 2/22


Part Number 3N150
Description N-Channel MOSFET
Maker STMicroelectronics
PDF Download

3N150 Datasheet PDF






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