Order code STB37N60DM2AG VDS 600 V RDS(on) max. 0.110 Ω ID 28 A PTOT 210 W 3 1 D2PAK Figure 1: Internal schematic diagram
* Designed for automotive application.

and AEC-Q101 qualified
* Fast-recovery body diode
* Extremely low gate charge and input capacitance
* Low on.

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters.

37-0508-20

37-0508-21

37-0508-30

37-0508-31

370C-08700-N-CV

370C-14350-N-CV

370C-22170-N-CV

370C-3055-N-CV

370S-16235P-CV

370S-3370P-CV

370S-4530P-C

370S-5028P-C

3710S

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