36NM60N Datasheet, STMicroelectronics

TAB 3 1 D2 PAK Order code STB36NM60N VDS @ TJmax 650 V RDS(on) max. ID PTOT 0.105 Ω 29 A 210 W
* Designed for automotive applications and AEC-Q101 qualified

and AEC-Q101 qualified
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input resi.

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and g.

36N06

36N50DA

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360-20xx-ND

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360D-5

3610KL

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361KD05JX

361KD05NX

361KD07

361KD07J