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30NF20 - STB30NF20

Description

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge.

It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters.

Table 1.

Features

  • Type STP30NF20 STW30NF20 STB30NF20.
  • VDSS 200V 200V 200V RDS(on) 0.075Ω 0.075Ω 0.075Ω ID 30A 30A 30A PTOT 125W 125W 125W TO-247 1 3 2 1 3 1 2 Gate charge minimized 100% avalanche tested Excellent figure of merit (RDS.
  • Qg) Very good manufactuing repeability Very low intrinsic capacitances 3 TO-220 D²PAK.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP30NF20 - STB30NF20 STW30NF20 N-channel 200V - 0.065Ω - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET™ Power MOSFET Features Type STP30NF20 STW30NF20 STB30NF20 ■ ■ ■ ■ ■ VDSS 200V 200V 200V RDS(on) 0.075Ω 0.075Ω 0.075Ω ID 30A 30A 30A PTOT 125W 125W 125W TO-247 1 3 2 1 3 1 2 Gate charge minimized 100% avalanche tested Excellent figure of merit (RDS*Qg) Very good manufactuing repeability Very low intrinsic capacitances 3 TO-220 D²PAK Application Figure 1. ■ Internal schematic diagram Switching applications Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters.
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