2STW1693 transistor equivalent, high power pnp epitaxial planar bipolar transistor.
* High breakdown voltage VCEO = -80 V
* Complementary to 2STW4466
* Typical ft = 20 MHz
* Fully characterized at 125 oC
Applications
* Audio power amp.
* Audio power amplifier
Description
The device is a PNP transistor manufactured in low voltage planar technology usi.
The device is a PNP transistor manufactured in low voltage planar technology using base island layout. The resulting transistor shows good gain linearity coupled with low VCE(sat) behaviour. Recommended for 40W to 70W high fidelity audio frequency am.
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