2STR1160 transistor equivalent, low voltage fast-switching npn power transistor.
* Very low collector-emitter saturation voltage
* High current gain characteristic
* Fast switching speed
* Miniature SOT-23 plastic package for
surface m.
* LED
* Battery charger
* Motor and relay driver
* Voltage regulation
Table 1: Device summary
Order c.
The device in a NPN transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
The complementary PNP is the 2.
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