Datasheet4U Logo Datasheet4U.com

2STR1160 - Low voltage fast-switching NPN power transistor

Description

high current density) technology.

NPNB1C3E2 performances coupled with very low saturation voltage.

The complementary PNP is the 2STR2160.

Features

  • 3 2 1 SOT-23.
  • Very low collector-emitter saturation voltage.
  • High current gain characteristic.
  • Fast switching speed.
  • Miniature SOT-23 plastic package for surface mounting circuits.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2STR1215 Low voltage fast-switching NPN power transistor ST Microelectronics
2STR1230 Low voltage fast-switching NPN power transistor ST Microelectronics
2STR2215 Low voltage fast-switching PNP power transistor ST Microelectronics
2STR2230 Low voltage fast-switching PNP power transistor ST Microelectronics
2ST1480 (2ST1480 / 2ST2480) Complementary power transistors ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
2STR2160 Low voltage fast-switching PNP power transistor
2ST15300 Rad-Hard NPN bipolar transistors
2ST2121 High power PNP epitaxial planar bipolar transistor
2ST31A Low voltage NPN power transistor
2ST3360K NPN/PNP transistors

Full PDF Text Transcription

Click to expand full text
2STR1160 Datasheet Low voltage fast-switching NPN power transistor Features 3 2 1 SOT-23 • Very low collector-emitter saturation voltage • High current gain characteristic • Fast switching speed • Miniature SOT-23 plastic package for surface mounting circuits Applications C (3) B (1) • Led • Battery charger • Motor and relay driver • Voltage regulation Description The device in a NPN transistor manufactured using new “PB-HCD” (power bipolar E (2) high current density) technology. The resulting transistor shows exceptional high gain NPNB1C3E2 performances coupled with very low saturation voltage. The complementary PNP is the 2STR2160.
Published: |