2STR1160 Description
The device in a NPN transistor manufactured using new “PB-HCD” (power bipolar E (2) high current density) technology. The resulting transistor shows exceptional high gain NPNB1C3E2 performances coupled with very low saturation voltage. The plementary PNP is the 2STR2160.
2STR1160 Key Features
- Very low collector-emitter saturation voltage
- High current gain characteristic
- Fast switching speed
- Miniature SOT-23 plastic package for surface mounting circuits