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2STF1525 - Transistors

General Description

The device is a NPN transistor manufactured using new “PB-HCD” (power bipolar high current density) technology.

The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.

Table 1.

Key Features

  • Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed 4 3 2 1.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com 2STF1525 Low voltage high performance NPN power transistor Preliminary data Features ■ ■ ■ Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed 4 3 2 1 Applications ■ ■ ■ ■ ■ ■ Emergency lighting LED Motherboard and hard disk drive Mobile equipment Battery charger Voltage regulation Figure 1. SOT-89 Internal schematic diagram Description The device is a NPN transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Table 1. Device summary Marking 1525 Package SOT-89 Packaging Tape and reel Order codes 2STF1525 June 2009 Doc ID 15794 Rev 1 1/7 www.st.