2STD1665T4
Features
- Very low collector to emitter saturation voltage
- High current gain characteristic
- Fast-switching speed
Applications
- Voltage regulators
- High efficiency low voltage switching applications
Description
The device is a low voltage NPN transistor with exceptional high gain performance coupled with very low saturation voltage. It is designed in planar technology with "base island" layout.
3 1 DPAK
Figure 1. Internal schematic diagram C (TAB)
(1) B
E (3)
Table 1. Device summary Order code 2STD1665T4
Marking D1665
Packages DPAK
Packaging Tape and reel
February 2011
Doc ID 12350 Rev 3
1/10
.st.
Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VCBO VCEO VEBO
IC ICM IB Ptot Tstg TJ
Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (t P < 5ms) Base current...
