2N5551HR transistor equivalent, hi-rel npn bipolar transistor.
Vceo
IC(max.)
160 V
0.5 A
* Hermetic packages
* ESCC and JANS qualified
* Up to 100 krad(Si) low dose rate
HFE at 5 V, 10 mA > 80
Tj(max.) 200 °C
Desc.
and suitable for low current and high precision circuits such preamplifiers, oscillators, current mirror circuits.
In ca.
This bipolar transistor is able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). All part numbers are guaranteed up to 100 krad with low dose rate at 0.1 rad/s as per ESCC 229.
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