2N2905AHR
2N2905AHR is Hi-Rel PNP bipolar transistor manufactured by STMicroelectronics.
Features
BVCEO IC (max) HFE at 10 V
- 150 m A Operating temperature range 60 V 0.6 A > 100 -65°C to +200°C
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- Hi-Rel PNP bipolar transistor Linear gain characteristics ESCC qualified European preferred part list
- EPPL Radiation level: lot specific total dose contact marketing for specified level Figure 1. Internal schematic diagram
TO-39
Description
The 2N2905AHR is a silicon planar epitaxial PNP transistor in a TO-39 package. It is specifically designed for aerospace Hi-Rel applications, and ESCC qualified in accordance with the 5202-002 specification. In case of discrepancies between this datasheet and ESCC detailed specification, the latter prevails.
.Data Sheet.net/
Table 1.
Device summary
Package TO-39 TO-39 Lead finish Gold Solder Dip Gold Marking 520200201 520200202 2N2905AT1 Type ESCC Flight Engineering model EPPL Yes Packaging Strip pack Strip pack
Order codes 2N2905AHR 2N2905AHR
October 2012
This is information on a product in full production.
Doc ID 15295 Rev 3
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Datasheet pdf
- http://..co.kr/
Electrical ratings
Electrical ratings
Table 2.
Symbol VCBO VCEO VEBO IC PTOT TSTG TJ
Absolute maximum ratings
Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Total dissipation at Tamb ≤ 25 °C Total dissipation at Tc ≤ 25 °C Storage temperature Max. operating junction temperature Value -60 -60 -5 -0.6 0.6 3 -65 to 200 200 Unit V V V A W W °C °C
Table 3.
Symbol Rth JC Rth JA
Thermal data
Parameter Thermal resistance junction-case __ Thermal resistance junction-ambient __ max max Value 58 291 Unit °C/W °C/W
.Data Sheet.net/
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Doc ID 15295 Rev 3
Datasheet pdf
- http://..co.kr/
Electrical characteristics
Electrical characteristics...
