19NM60 mosfet equivalent, n-channel power mosfet.
3 2 1
TO-247
Figure 1. Internal schematic diagram
$ 4!"
'
3
Order code
VDS (@Tjmax)
STW19NM60N 650 V
RDS(on) max.
ID PTOT
0.285 Ω 13 A 110 W
* Designed.
and AEC-Q101 qualified
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input resi.
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and g.
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