19N3LLH6 mosfet equivalent, n-channel power mosfet.
Order code
VDS
STL19N3LLH6AG
30 V
* AEC-Q101 qualified
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* Low gate dri.
* Switching applications
S(1, 2, 3)
12 34 Top View
NG4D5678S123
Description
This device is an N-channel Power MOS.
This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Product status link STL19N3LLH6AG
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