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18N55M5 - N-channel Power MOSFET

Description

layout.

Features

  • TAB 23 1 DPAK D(2, TAB) Order code VDS at TJ max. RDS(on) max. ID STD18N55M5 600 V 192 mΩ 16 A.
  • Extremely low RDS(on).
  • Low gate charge and input capacitance.
  • Excellent switching performance.
  • 100% avalanche tested.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD18N55M5 Datasheet N-channel 550 V, 150 mΩ typ., 16 A MDmesh M5 Power MOSFET in a DPAK package Features TAB 23 1 DPAK D(2, TAB) Order code VDS at TJ max. RDS(on) max. ID STD18N55M5 600 V 192 mΩ 16 A • Extremely low RDS(on) • Low gate charge and input capacitance • Excellent switching performance • 100% avalanche tested Applications G(1) • Switching applications Description S(3) AM01475v1_noZen This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.
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