Type STB185N55F3 STP185N55F3 VDSS 55V 55V RDS(on) 3.5mΩ 3.8mΩ ID 120A(1) 120A(1) Pw 330W 330W 1. Value limited by wire bonding
* Ultra low on-resistance
* .

* Switching applications
  – Automotive 3 2 1 TO-220 3 1 D2PAK Figure 1. Internal schematic diagram.

This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “single feature size™” strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting t.

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