Type STI14NM65N STB14NM65N STF14NM65N STP14NM65N STW14NM65N VDSS (@TJmax) 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.38 Ω < 0.38 Ω < 0.38 Ω < 0.38 Ω < 0.38 Ω ID 12.

Description This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary P.

This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest onresistance and gate charge. .

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