13009L transistor equivalent, npn power transistor.
* Low spread of dynamic parameters
* High voltage capability
* Minimum lot-to-lot spread for reliable operation
* Very high switching speed
Applications
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* Switch mode power supplies
Description
The device is manufactured using high voltage multi-epitaxial planar techno.
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a hollow emitter structure to enhance switching speeds.
3 2 1
TO-220
Figure 1. Internal schematic diagram
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