13005F transistor equivalent, high voltage fast-switching npn power transistor.
* Low spread of dynamic parameters
* Minimum lot-to-lot spread for reliable operation
* Very high switching speed
Applications
* Electronic ballast for fl.
* Electronic ballast for fluorescent lighting
* Switch mode power supplies
Description
This device is manufactur.
This device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a .
Image gallery
TAGS
Download (Size : 200.12KB)