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12NK90Z - STW12NK90Z

Description

This device is made using the SuperMESH™ Power MOSFET technology that is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.

Features

  • Order code STW12NK90Z VDSS 900 V RDS(on) max ID Pw < 0.88 Ω 11 A 230 W.
  • Extremely high dv/dt capability.
  • 100% avalanche tested.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • Very good manufacturing repeatability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STW12NK90Z N-channel 900 V, 0.72 Ω, 11 A TO-247 Zener-protected SuperMESH™ Power MOSFET Features Order code STW12NK90Z VDSS 900 V RDS(on) max ID Pw < 0.88 Ω 11 A 230 W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Very good manufacturing repeatability Application ■ Switching applications Description This device is made using the SuperMESH™ Power MOSFET technology that is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
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