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11N6F - N-channel Power MOSFET

11N6F Product details

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

  • Order code STL11N6F7 VDS 60 V RDS(on) max. 12 mΩ ID 11 A Features.
  • Among the lowest RDS(on) on the market.
  • Excellent figure of merit (FoM).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.

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N-channel Power MOSFET STMicroelectronics
STMicroelectronics 11N6F-like datasheet

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