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11N6F - N-channel Power MOSFET

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

  • Order code STL11N6F7 VDS 60 V RDS(on) max. 12 mΩ ID 11 A Features.
  • Among the lowest RDS(on) on the market.
  • Excellent figure of merit (FoM).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.

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Datasheet preview – 11N6F

Datasheet Details

Part number 11N6F
Manufacturer STMicroelectronics
File Size 532.62 KB
Description N-channel Power MOSFET
Datasheet download datasheet 11N6F Datasheet
Additional preview pages of the 11N6F datasheet.

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Full PDF Text Transcription

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STL11N6F7 N-channel 60 V, 10 mΩ typ., 11 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 3.3x3.3 package Datasheet - production data 1 2 3 4 PowerFLAT™ 3.3x3.3 Figure 1: Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) Features Order code STL11N6F7 VDS 60 V RDS(on) max. 12 mΩ ID 11 A Features  Among the lowest RDS(on) on the market  Excellent figure of merit (FoM)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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