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10NK60Z - N-channel MOSFET

General Description

This high voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™.

Key Features

  • Order code VDS RDS(on) max. ID Ptot STFU10NK60Z 600 V 0.75 Ω 10 A 35 W.
  • Extremely high dv/dt capability.
  • 100% avalanche tested.
  • Gate charge minimized.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STFU10NK60Z N-channel 600 V, 0.68 Ω typ., 10 A, SuperMESH™ Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data 3 2 1 TO-220FP ultra narrow leads Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID Ptot STFU10NK60Z 600 V 0.75 Ω 10 A 35 W  Extremely high dv/dt capability  100% avalanche tested  Gate charge minimized  Zener-protected Applications  Switching applications Description This high voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.