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STD2NC45-1 - N-Channel MOSFET

General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Key Features

  • Extremely high dv/dt capability.
  • 100% avalanche tested.
  • Gate charge minimized.
  • New high voltage benchmark.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD2NC45-1 N-channel 450 V, 4.1 Ω, 1.5 A, IPAK SuperMESH™ Power MOSFET Features ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ New high voltage benchmark Application ■ Switching applications Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products. 3 2 1 IPAK Figure 1. Internal schematic diagram Table 1.