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POWER MOSFET
Features
60V,50A N-Channel MOSFET RDS(on)(typ.)=6mΩ@VGS=10V High ruggedness Fast switching 100% avalanche tested Exceptional dv/dt capability
Applications
Switching application Motor drive
SF50N06P SF50N06F
SF50N06
SF50N06I SF50N706D
Absolute Maximum Ratings
Symbol
Parameter
VDSS VGS
ID
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(TC=25 ℃) Continuous Drain Current(TC=100℃)
IDM EAS
PD
TJ TSTG
Pulsed Drain Current(Note 1 ) Single Pulsed Avalanche Energy(Note 2) Maximum Power Dissipation ( TC=25 ℃) Maximum Power Dissipation ( TC=100℃) Operating Junction Temperature Range Storage Temperature Range
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2.Starting TJ=25℃,L=1.