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PRODUCT SPECIFICATIONS
SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TO-220 TYPE: MTP3N55
HIGH VOLTAGE POWER MOSFET N-CHANNEL
ABSOLUTE MAXIMUM RATING: Drain – Source Voltage Drain – Gate Voltage Drain Current – Continuous Drain Current – Pulsed Gate – Source Voltage Power Dissipation Inductive Current Operating and Storage Temperature Lead Temperature From Case VDSS VDGR ID IDM VGS PD IL TJ & Tstg TL 550 550 3.0 10 ±20 75 -65 to +150 275 Vdc Vdc Adc Adc Vdc Watts Adc °C °C
ELECTRICAL CHARACTERISTICS TA @ 25° C Parameters Symbol Test Conditions Drain Source BVDSS ID = .25mA Breakdown Voltage Gate Threshold Voltage VGS(th) ID = 1.0mA ID = 1.