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STP4803 - Dual P-Channel Enhancement Mode MOSFET

Description

STP4803 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number STP4803
Manufacturer STANSON
File Size 686.87 KB
Description Dual P-Channel Enhancement Mode MOSFET
Datasheet download datasheet STP4803 Datasheet
Additional preview pages of the STP4803 datasheet.

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STP4803 Dual P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION STP4803 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD backlight, notebook computer power management, and other battery powered circuits. PIN CONFIGURATION SOP-8 FEATURE � -30V/-5.2A, RDS(ON) = 38mΩ (Typ.) @VGS =-10V � -30V/-4.0A, RDS(ON) = 52mΩ @VGS = -4.
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