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STN2610D Datasheet, STANSON

STN2610D mosfet equivalent, n-channel enhancement mode mosfet.

STN2610D Avg. rating / M : 1.0 rating-11

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STN2610D Datasheet

Application

PIN CONFIGURATION TO-252 TO-251 FEATURE l 60V/10.0A, RDS(ON) = 10mΩ (Typ.) @VGS = 10V l 60V/8.0A, RDS(ON) = 12mΩ @VG.

Description

STN2610D is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION TO-252 TO-251 FEATURE l 60V/10.0A, RDS(ON) = 10mΩ (Typ.) @VGS = 10V l 60V/.

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STN2610D Page 1 STN2610D Page 2 STN2610D Page 3

TAGS

STN2610D
N-Channel
Enhancement
Mode
MOSFET
STN2018
STN210D
STN2120
STANSON

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