STN2610D mosfet equivalent, n-channel enhancement mode mosfet.
PIN CONFIGURATION TO-252
TO-251
FEATURE
l 60V/10.0A, RDS(ON) = 10mΩ (Typ.) @VGS = 10V
l 60V/8.0A, RDS(ON) = 12mΩ @VG.
STN2610D is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications.
PIN CONFIGURATION TO-252
TO-251
FEATURE
l 60V/10.0A, RDS(ON) = 10mΩ (Typ.) @VGS = 10V
l 60V/.
Image gallery
TAGS