ST47P06D - P-Channel Enhancement Mode MOSFET

Description

ST47P06D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

STANSON

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Datasheet Details

Part number	ST47P06D
Manufacturer	STANSON
File Size	692.63 KB
Description	P-Channel Enhancement Mode MOSFET
Datasheet	ST47P06D Datasheet
Additional preview pages of the ST47P06D datasheet.

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ST47P06D P Channel Enhancement Mode MOSFET -47.0A DESCRIPTION ST47P06D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These device is particularly suited for low voltage application, notebook computer power management and other battery circuits where high-side switching. PIN CONFIGURATION FEATURE -60V/-24A, RDS(ON) = 22mΩ (Typ.) @VGS = -10V -60V/-10A, RDS(ON) = 30mΩ @VGS = -4.

Published: Sep 3, 2018 |