ST36N10D mosfet equivalent, n-channel enhancement mode mosfet.
PIN CONFIGURATION TO-252
FEATURE
l 100V/20.0A, RDS(ON) = 40mΩ (Typ.) @VGS = 10V
l 100V/20.0A, RDS(ON) = 42mΩ @VGS = 4.
STN36N10D is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications.
PIN CONFIGURATION TO-252
FEATURE
l 100V/20.0A, RDS(ON) = 40mΩ (Typ.) @VGS = 10V
l 100V/20.0A.
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