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SFT5926-63 - SILICON NPN POWER TRANSISTOR

Key Features

  • High Frequency transistor with BVCEO to 120 Volts.
  • Enhanced SOA capability and Fast Switching.
  • High Power Dissipation: 350 Watts.
  • 200°C Operating Temperature.
  • Replacement for 2N5926.
  • TX, TXV, S-Level Screening Available2/ - Consult Factory Maximum Ratings Symbol Collector.
  • Emitter Voltage Collector.
  • Base Voltage Emitter.
  • Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25ºC Derate abo.

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Datasheet Details

Part number SFT5926-63
Manufacturer SSDI
File Size 101.97 KB
Description SILICON NPN POWER TRANSISTOR
Datasheet download datasheet SFT5926-63 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.