SSP5N60 Description
This Power MOSFET is produced using Sourcesemi’s advanced planar stripe, DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics, such as fast switching time,low on resistance.low gate charge and especially excellent avalanche characteristics.
SSP5N60 Key Features
- 4.5A,600v,RDS(on)=2.5Ω@VGS=10V
- Gate charge (Typical 27nC)
- High ruggedness
- Fast switching
- 100% AvalancheTested
- Improved dv/dt capability