SSP5N60 Datasheet | SOURCESEMI

Features - 4.5A,600v,RDS(on)=2.5Ω@VGS=10V - Gate charge (Typical 27n C) - High ruggedness - Fast switching - 100% Avalanche Tested - Improved dv/dt capability SSP5N60/SSF5N60C General Description This Power MOSFET is produced using Sourcesemi’s advanced planar stripe, DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics, such as fast switching time,low on resistance.low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at AC adaptors, on the battery charger and SMPS Absolute Maximum Ratings Symbol Parameter VDSS Drain to Source Voltage Continuous Drain Current(@TC = 25°C) ID Continuous Drain Current(@TC = 100°C) IDM VGS EAS EAR dv/dt Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C SSP5N60C SSF5N60C Units 600 V 4.5 4.5- A 2.5 2.5- A (Note 1) 16- A ±30 V (Note 2) 240 m J (Note 1) 10 m J (Note 3) 5.0 V/ns 100 33 0.8 0.26 W/ °C TSTG, TJ TL Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. -55 ~ 150 300 °C...