ST30120C - SCHOTTKY RECTIFIER

Features

• 150 C TJ operation.
• Center tap configuration.
• Ultralow forward voltage drop.
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
• High frequency operation.
• Guard ring for enhanced ruggedness and long term reliability.
• Trench MOS Schottky technology.
• This is a Pb.
• Free Device.
• All SMC parts are traceable to the wafer lot.
• Additional testing can be offered upon request ST30120C STB.