Datasheet Details
| Part number | SH5126SV351816-SE |
|---|---|
| Manufacturer | SMART Modular |
| File Size | 449.96 KB |
| Description | 4GB (512Mx64) DDR3 SDRAM Module |
| Datasheet |
 SH5126SV351816-SE Datasheet
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General Description
512Mx64 (4GB), DDR3, 204-Pin Unbuffered SO-DIMM, Non-ECC, 512Mx8 Based, PC3L-12800, DDR3L-160011-11-11, 30.00mm, 1.35V/1.5V, Halogen-Free (RoHS Compliant).
Samsung, Rev.
Key Features
- Standard = JEDEC.
- ZQ calibration supported.
- Configuration = Non-ECC.
- On chip DLL align DQ, DQS and DQS transition.
- Number of Module Ranks = 1 with CK transition.
- Number of Devices = 8.
- DM write data-in at both the rising and falling.
- VDD = VDDQ = 1.35V/1.5V.
- VDDSPD = 3.0V to 3.6V.
- Cycle Time = 1.25ns.
- CAS Latency = 5, 6, 7, 8, 9, 10, 11.
- Additive Latency = 0, CL-1, and CL-2.