SLP2N60C Overview
This Pow er MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency sw itched mode power supp lies, active power factor corr ection based on half br...
SLP2N60C Key Features
- 2.0A, 600V, RDS(on) = 5.00Ω @VGS = 10 V
- Low gate charge ( typical 9nC)
- High ruggedness
- Fast wsitching
- 100% avalanche tested
- Improved dv/dt capability
