SLP2N60C mosfet equivalent, n-channel mosfet.
* 2.0A, 600V, RDS(on) = 5.00Ω @VGS = 10 V
* Low gate charge ( typical 9nC)
* High ruggedness
* Fast wsitching
* 100% avalanche tested
* Improved d.
This Pow er MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse.
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