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SLP2N60C - N-Channel MOSFET

Datasheet Summary

Description

This Pow er MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode.

Features

  • 2.0A, 600V, RDS(on) = 5.00Ω @VGS = 10 V.
  • Low gate charge ( typical 9nC).
  • High ruggedness.
  • Fast wsitching.
  • 100% avalanche tested.
  • Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
  • ◀▲ {G.
  • {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Sourc.

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Datasheet Details

Part number SLP2N60C
Manufacturer SL SEMI
File Size 314.97 KB
Description N-Channel MOSFET
Datasheet download datasheet SLP2N60C Datasheet
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Full PDF Text Transcription

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SLP2N60C / SLF2N60C 600V N-Channel MOSFET General Description This Pow er MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency sw itched mode power supp lies, active power factor corr ection based on half br idge topology. Features • 2.0A, 600V, RDS(on) = 5.
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