SLP2N60C Overview
Description
This Pow er MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode.
Key Features
- 2.0A, 600V, RDS(on) = 5.00Ω @VGS = 10 V
- Low gate charge ( typical 9nC)
- High ruggedness
- Fast wsitching
- 100% avalanche tested
