* 0.7A, 600V, RDS(on) = 11.50Ω @VGS = 10 V
* Low gate charge ( typical 5.2nC)
* High ruggedness
* Fast wsitching
* 100% avalanche tested
* Improve.

This Pow er MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse.

SLN10A-5SA

SLN-186

SLN-286

SL-103-G-12

SL-10x-x-xx

SL-11x-x-xx

SL-12x-x-xx

SL-13x-x-xx

SL-1498T

SL-3300

SL-3310

SL-3GHD128128

SL-560

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