SLF7N65C mosfet equivalent, 650v n-channel mosfet.
* 7.0A, 650V, RDS(on) = 1.60Ω @VGS = 10 V
* Low gate charge ( typical 29nC)
* High ruggedness
* Fast wsitching
* 100% avalanche tested
* Improved .
This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse .
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