∗ 4A,650V, RDS(on)(typ)=2.5Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF4N65T SVF4N.

SVF4N65T/F(G)/M is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especiall.

SVF4N65CAD

SVF4N65CAF

SVF4N65CAK

SVF4N65CAM

SVF4N65CAMJ

SVF4N65CAMN

SVF4N65D

SVF4N65F

SVF4N65FG

SVF4N65K

SVF4N65M

SVF4N65MJ

SVF4N65MJG

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