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H5TQ1G83EFR-xxJ, H5TQ1G83EFR-xxC Datasheet - SK Hynix

H5TQ1G83EFR-xxJ 1Gb DDR3 SDRAM

The H5TQ1G6(8)3EFR-xxx series are a 1,073,741,824-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix Inc. 1Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising .

H5TQ1G83EFR-xxJ Features

* and Ordering Information FEATURES

* DQ Power & Power supply : VDD & VDDQ = 1.5V +/0.075V

* DQ Ground supply : VSSQ = Ground

* Fully differential clock inputs (CK, CK) operation

* Differential Data Strobe (DQS, DQS)

* On chip DLL align DQ, DQS and DQS transitio

H5TQ1G83EFR-xxC_SKHynix.pdf

This datasheet PDF includes multiple part numbers: H5TQ1G83EFR-xxJ, H5TQ1G83EFR-xxC. Please refer to the document for exact specifications by model.
H5TQ1G83EFR-xxJ Datasheet Preview Page 2 H5TQ1G83EFR-xxJ Datasheet Preview Page 3

Datasheet Details

Part number:

H5TQ1G83EFR-xxJ, H5TQ1G83EFR-xxC

Manufacturer:

SK Hynix

File Size:

501.63 KB

Description:

1gb ddr3 sdram.

Note:

This datasheet PDF includes multiple part numbers: H5TQ1G83EFR-xxJ, H5TQ1G83EFR-xxC.
Please refer to the document for exact specifications by model.

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TAGS

H5TQ1G83EFR-xxJ H5TQ1G83EFR-xxC 1Gb DDR3 SDRAM SK Hynix

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